inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 1 isc n-channel mosfet transistor IRF3205 features drain current Ci d = 110a@ t c =25 drain source voltage- : v dss = 55v(min) static drain-source on-resistance : r ds(on) = 0.008 (max) description advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggediz ed device design that hexfet power mosfets are well kn own for, provides the designer with an extremely effici ent and reliable device for use in a wide variety of applic ations. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter value unit v dss drain-source voltage 55 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 110 a i dm drain current-single pluse 390 a p d total dissipation @t c =25 200 w t j max. operating junction temperature 175 t stg storage temperature -55~175 symbol parameter max unit r th j-c thermal resistance, junction to case 0.75 /w r th j-a thermal resistance, junction to ambient 62 /w
inchange semiconductor isc product specification isc websit e www.iscsemi.com isc & iscsemi is registered trademark 2 isc n-channel mosfet transistor IRF3205 electrical characteristics t c =25 unless otherwise specified symbo l parameter conditions min type max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 55 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 62a 0.008 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 55v; v gs = 0 25 a v sd forward on-voltage i s = 62a; v gs =0 1.3 v gfs forward transconductance v ds = 25v i d = 62a 44 s
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